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| VTP Process Photodiodes VTP3410LA PACKAGE DIMENSIONS inch (mm) PRODUCT DESCRIPTION Small area planar silicon photodiode in a long T1, endlooking package. The package material is infrared transmitting (blocking visible light). These diodes exhibit low dark current under reverse bias and fast speed of response. CASE 50A LONG T-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40C to 100C -40C to 100C ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also VTP curves, page 46) VTP3410LA SYMBOL ISC TC ISC VOC TC VOC ID RSH CJ Re SR range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance Junction Capacitance Responsivity Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 30 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 50 V H = 0, V = 10 mV H = 0, V = 3 V 940 nm @ Peak 700 925 140 20 1.9 x 10 -13 (Typ.) 5.3 x 10 11 (Typ.) .013 .55 1150 10 25 15 Typ. 22 .26 350 -2.0 35 Max. A %/C mV mV/C nA G pF A/(W/cm2) A/W nm nm V Degrees W Hz cm Hz / W UNITS PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 54 |
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